1994. 6. 24
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC3190
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
HF BAND AMPLIFIER APPLICATION.
FEATURE
Low Noise Figure : NF=3.5dB(Max.) (f=1MHz).
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
35
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
4
V
Collector Current
I
C
100
mA
Emitter Current
I
E
-100
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : h
FE
Classification R:40 80 , O:70 140 , Y:120 240
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=20V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=2V, I
C
=0
-
-
1.0
A
DC Current Gain
h
FE
(Note)
V
CE
=12V, I
C
=2mA
40
-
240
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=10mA, I
B
=1mA
-
-
0.4
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=10mA, I
B
=1mA
-
-
1.0
V
Transition Frequency
f
T
V
CE
=10V, I
C
=2mA
80
120
-
MHz
Reverse Transfer Capacitance
C
re
V
CB
=10V, I
E
=0, f=1MHz
-
2.2
3.0
pF
Collector-Base Time Constant
C
c
rbb
'
V
CE
=10V, I
E
=-1mA, f=30MHz
-
30
50
pS
Noise Figure
NF
V
CE
=10V, I
C
=1mA,
f=1MHz, Rg=50
-
2.0
3.5
dB
1994. 6. 24
2/2
KTC3190
Revision No : 0
10
FORWARD TRANSFER ADMITTANCE
5
300
2
COLLECTOR-EMITTER VOLTAGE V (V)
CE
y ,
- V
y - I
E
EMITTER CURRENT I (mA)
-0.1
-0.3
-0.5
re
0
REVERSE TRANSFER ADMITTANCE
10
10
REVERSE TRANSFER ADMITTANCE
3
re
100
2
COLLECTOR-EMITTER VOLTAGE V (V)
CE
y - V
y
- I
E
EMITTER CURRENT I (mA)
-0.1
-0.3
-0.5
-1
100
5
10
re
E
y (
S)
-1
-3
-5
30
50
100
COMMON EMITTER
V =6V
f=1MHz
Ta=25 C
=-90 C
CE
re
fe
re
CE
4
6
8
10
12
14
16
y (mS)
fe
30
50
100
fe
TRANSFER ADMITTANCE
( )
PHASE ANGLE OF FORWARD
-0.5
-1
-3
-5
-10
-30
COMMON EMITTER
I =-1mA
f=1MHz
Ta=25 C
E
y
fe
fe
re
CE
y (
S)
4
6
8
10
12
14
16
5
30
50
COMMON EMITTER
I =-1mA
f=1MHz
Ta=25 C
=-90
E
re
fe
E
fe
,
-3
-5
30
50
fe
y (mS)
FORWARD TRANSFER ADMITTANCE
PHASE ANGLE OF FORWARD
TRANSFER ADMITTANCE
( )
fe
-0.5
-1
-3
-5
-10
COMMON EMITTER
V =6V
f=1MHz
Ta=25 C
CE
y R, O, Y
fe
fe
R, O, Y
y PARAMETERS (Typ.) (COMMON EMITTER V
CE
=6V, I
E
=1mA, f=1MHz)
CHARACTERISTIC
SYMBOL
KTC3190-R
KTC3190-O
KTC3190-Y
UNIT
Input Conductance
g
ie
0.5
0.35
0.22
mS
Input Capacitance
C
ie
50
48
46
pF
Output Conductance
g
oe
4
5
6.5
S
Output Capacitance
C
oe
3.7
3.4
3.2
pF
Forward Transfer Admittance
|y
fe
|
36
36
36
mS
Phase Angle of Forward Transfer Admittance
fe
-1.6
-1.6
-1.6
Reverse Transfer Admittance
|y
re
|
14
14
14
S
Phase Angle of Reverse Transfer Admittance
re
-90
-90
-90
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